Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.

Contributions include, but are not limited to, a variety of topics such as:

Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive

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Editorial board

Editor-in-Chief

  • A.R. Boccaccini
    Dept. of Materials Science & Engineering, Institute for Biomaterials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 6, 91058, Erlangen, Germany

Editors

  • R. Arroyave
    Department of Materials Science and Engineering, Texas A & M University, 119 Mechanical Engineering Office Bldg, College Station, Texas, 77843-3123, USA
  • M. Carboni
    LHYS Laboratoire des systèmes HYbrides pour la Séparation, Institut de Chimie Séparative de Marcoule, Bât. 426 – L1-21 – BP 17171, F-30207, Bagnols/Ceze cedex, France
  • R. H. R. Castro
    Department of Materials Science and Engineering, University of California, Davis, One Shields Ave, Davis, California, 95616, USA
  • O.A. Graeve
    Dept. of Mechanical and Aerospace Engineering, University of California at San Diego (UCSD), 9500 Gilman Drive, La Jolla, San Diego, California, 92093-0411, USA
  • J. Hojo
    Dept. of Applied Chemistry, Kyushu University, 744 Motooka, Nishi-ku, 819-0395, Fukuoka, Japan
  • V.V. Kharton
    Institute of Solid State Physics RAS, 2 Academician Osipyan Str., Chernogolovka, 142432, Moscow District, Russian Federation
  • I.V. Kityk
    Faculty of Electrical Engineering, Inst. of Optoelectronics and Measuring Systems, Politechnika Czestochowska, ul. Armii Krajowej 17, 42-201, Częstochowa, Poland
  • L.S. Shvindlerman
    Inst. für Metallkunde und Metallphysik, RWTH Aachen University (RWTH), Kopernikusstr. 14, D-52056, Aachen, Germany
  • K.G. Webber
    Department of Materials and Science, FG Glas and Keramik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstr. 5, 91058, Erlangen, Germany
  • A.F.W. Willoughby
    Engineering Materials, University of Southampton, University Road, SO17 1BJ, Highfield, Southampton, UK
  • J-M. Yang
    Dept. of Materials Science & Engineering, University of California at Los Angeles (UCLA), Los Angeles, California, CA 90095-1595, USA
  • Y.F. Zheng
    Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, No.5 Yi-He-Yuan Road, Hai-Dian District, 100871, Beijing, China

Associate Editorial Board

  • Z. Ahmad
    De Montfort University, Leicester, England, UK
  • K. Aifantis
    University of Arizona
  • A. Bellosi
    Istituto di Scienza e Tecnologia dei Materiali Ceramici (ISTEC), Faenza, Italy
  • J. Blaker
    University of Manchester, Manchester, England, UK
  • B. Bokstein
    National University of Science and Technology, Moscow, Russian Federation
  • M. Cinibulk
    Wright-Patterson Air Force Base, AFB, Dayton, Ohio, USA
  • P. Colombo
    Università degli Studi di Padova, Padova, Italy
  • E. Daniel
    University of Liverpool, UK
  • J. Dickerson
    Vanderbilt University, Nashville, Tennessee, USA
  • N. Gao
    University of Southampton, Southampton, UK
  • H. Gleiter
    Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany
  • A. Glezer
    Kurdyumov Institute, Russia
  • T. Goto
    Tohoku University, Aoba-ku, Sendai, Japan
  • D.C. Greenspan
    Spinode Consulting, Gainesville, Florida, USA
  • A. Hozumi
    National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan
  • J. Jang
    National Central University, Taiwan
  • Y. Kaganovsky
    Bar-llan University, Ramat-Gan, Israel
  • P. Kao
    National Sun Yat-Sen University, Taiwan
  • J.A. Kilner
    Imperial College London, London, UK
  • M. Lanagan
    Pennsylvania State University, University Park, Pennsylvania, USA
  • T. Laoui
    King Fahd University of Petroleum & Minerals, Dhahran, Saudi Arabia
  • X.G. Li
    University of Science and Technology of China (USTC), Hefei, Anhui, China
  • Y.Y. Li
    City University of Hong Kong, Kowloon, Hong Kong, China
  • T. Lopez
    Univ Autonoma Metropolitana, Mexico D.F., Mexico
  • Z.P. Lu
    University of Science and Technology Beijing, Beijing, China
  • X.L. Ma
    Chinese Academy of Sciences (CAS), Shenyang, China
  • J.F. Mano
    Universidade de Aveiro, Aveiro, Portugal
  • S.N. Nazhat
    McGill University, Canada
  • V. Novikov
    National University of Science and Technology, Moscow, Russian Federation
  • A. Orlov
    Stony Brook University, New York, USA
  • P. Reed
    University of Southampton, Highfield, Southampton, UK
  • Y. Sakka
    National Institute of Materials Science, Ibaraki, Japan
  • M. Sayer
    Queen's University, Kingston, Ontario, Canada
  • J. Shen
    Intel Corporation, Chandler, Arizona, USA
  • T. Siegrist
    Florida State University, Tallahassee, Florida, USA
  • N. A. Stolwijk
    Westfälische Wilhelms-Universität Münster, Münster, Germany
  • B. Straumal
    Moscow, Russian Federation
  • Y. Sugahara
    Waseda University, Tokyo, Japan
  • M. Wang
    The University of Hong Kong, Hong Kong, China
  • W.B. White
    Pennsylvania State University, University Park, Pennsylvania, USA
  • C. Zollfrank
    Technische Universität München, Straubing, Germany

Founding Editor

  • F.F.Y. Wang

Editor Emeritus

  • J.H. Wernick