| Atomic layer deposition (ALD)
is chemical vapor deposition method for the production of high-quality
thin films, even on large-area surfaces. It produces excellent conformality
and step coverage on the deepest trenches and nonuniform substrates. Most
ALD research is directed toward high-k oxide materials needed in microelectronics,
but it can also be used for the preparation of nanotubes and coating of
nanoscale three-dimensional particles. Uniform oxide thin films deposited
by ALD onto planar and patterned deep-trench Si wafers are shown in this
image. |
