Semiconductors have become a cornerstone of today's economy, and are thought to remain so in the future, with extended applications in energy production, conversion and storage, as well as lighting and data transmission.
This development relies both on the improvement of today's processing techniques for known intelligent technologies (IT - mainly Si-based) but also on the development of new materials such as GaN diodes (laser and LEDs), Diamond or SiC (power electronics), III-V and II-VI materials (opto-electronic components) and Graphene, and 2D materials (next generation semiconductors)….
One of the key factor in establishing or not such development is the ability to produce defect-free substrates or structures to make them compatible with large-scale production technologies.
The scope of the Extended Defects in Semiconductors (EDS) Conference is to bring together experts on fundamental and applied research to establish a state of the art evaluation of the studies about individual defect and microstructures in semiconductors. This will be done both through the viewpoints of characterization techniques (X-Ray, Transmission and Scanning Electron Microscopy, Ion Microscopy, Infra Red Microscopy, Neutrons…..), simulation methods (Molecular Dynamics, Ab Initio, Finite Elements…) and theoretical approaches.
VISIT EVENT WEBSITE
- Materials for solar energy conversion and energy storage
- Thin films and heterostructures
- Low-dimensional systems and related defects: 2D semiconductor (graphene, MoS2,…), nanocrystals, nanowires, quantum wells, quantum dots,
- Interface structures and defect interaction
- Doping-, irradiation-, and implantation-induced defects
- Electronic structure of defects
- Defect engineering, strain engineering
- Mechanical properties and dislocation dynamics
- Role of defects in opto-electronic and magnetic properties
- Degradation mechanisms in semiconductor devices
- Atomistic and multiscale simulations, modeling approaches of defects, interfaces and nanostructures
- Advanced characterization techniques and methods, in-situ imaging and analysis
- Interaction of point and extended defects, point defect agglomeration