We are very proud to announce the publication of the Special Issue on Planar fully-depleted SOI technology, edited by F. Allibert, T. Hiramoto and B.Y. Nguyen.
This issue covers all topics, from materials to products, including device development and circuit design that are relevant to the planar Fully-Depleted SOI technology.
All the papers from the special issue have been made freely available online until June 30, 2016.
Specifically, we would like to bring the Invited Review Papers in this special issue to your attention:
Ultra-thin body & buried oxide SOI substrate development and qualification for Fully Depleted SOI device with back bias capability
Walter Schwarzenbach, Bich-Yen Nguyen, Frederic Allibert, Christophe Girard, Christophe Maleville
Pages 2-9
A review of electrical characterization techniques for ultrathin FDSOI materials and devices
Sorin Cristoloveanu, Maryline Bawedin, Irina Ionica
Pages 10-36
Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond
B. Doris, B. DeSalvo, K. Cheng, P. Morin, M. Vinet
Pages 37-59
We hope you will enjoy reading the special issue and hope it will be helpful for your research!
With kind regards,
The Editors of Solid State Electronics