Materials chemistry for low-k materials
Volume 9, Issue 3, Page 22–31
| Benjamin D. Hatton, Kai Landskron, William J. Hunks, Mark R. Bennett, Donna Shukaris, Douglas D. Perovic, Geoffrey A. Ozin
The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. Integral in this development has been the replacement of the conventional Al/SiO2 metal and dielectric materials in multilevel interconnect structures. Higher-conductivity Cu has now successfully replaced Al interconnects, but there is still a need for new low dielectric constant (k) materials, as an interlayer dielectric.
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DOI: 10.1016/S1369-7021(06)71387-6
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