Devices grown on non-polar and semi-polar GaN substrates address many polarization related problems present in c-plane GaN growth. Device results, advantages, and limitations of various non-polar and semi-polar systems are discussed in terms of polarization properties, Indium incorporation, extended defect formation, and critical thickness. A brief description of challenges and progress in UV LDs is also presented.
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Materials Today (2011) 14(9), 408-415