Flash nonvolatile memory has been widely applied in portable electronic products. However, traditional flash memory is expected to reach physical limits as its dimensions are scaled down; the charges stored in the floating gate can leak out more easily through a thin tunneling oxide, causing a serious reliability issue. In order to solve this problem, discrete nanocrystal memory has been proposed and is considered to be a promising candidate for the next generation of nonvolatile memories due to its high operation speed, good scalability, and superior reliability.

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Materials Today (2011) 14(12), 608-615
doi: 10.1016/S1369-7021(11)70302-9