Light-controlled molecular resistive switching ferroelectric heterojunction

Abstract: Molecular ferroelectrics have attained significant advancement as a promising approach towards the development of next-generation non-volatile memory devices. Herein, the semiconducting-ferroelectric heterojunctions which is composed of molecular ferroelectrics (R)-(−)-3-hydroxlyquinuclidinium chloride together with organic charge transfer complex is reported. The molecular ferroelectric domain provides polarization and bistability while organic charge transfer phase allows photo-induced charge generation and transport for photovoltaic effect. By switching the direction of the polarization in the ferroelectric phase, the heterojunction-based devices show non-volatile resistive switching under external electric field and photocurrent/voltage induced by light excitation, stable fatigue properties and long retention time. Overall, the photovoltaic controlled resistive switching provides a new route for all-organic multiphase non-volatile memories.