ACCGE-20 provides a forum for the presentation and discussion of recent research and development activities in all aspects of epitaxial thin film and bulk crystal growth; sessions will integrate fundamentals, experimental and industrial growth processes, characterization and applications.
Scientists have grown thin films of two different crystalline materials on top of each other using an innovative technique called ‘dative epitaxy’.
Using molecular beam epitaxy, researchers have managed to deposit a ferroelectric semiconductor as a thin film just 5nm thick.