III-V/Si photonics by die-to-wafer bonding
Volume 10, Issues 7–8, Page 36–43
| G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets, P. Rojo Romeo, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, J.M. Fedeli, L. Di Cioccio, C. Lagahe-Blanchard
Photonic integrated circuits offer the potential of realizing low-cost, compact optical functions. Silicon-on-insulator (SOI) is a promising material platform for this photonic integration, as one can rely on the massive electronics processing infrastructure to process the optical components. However, the integration of a Si laser is hampered by its indirect bandgap. Here, we present the integration of a direct bandgap III-V epitaxial layer on top of the SOI waveguide layer by means of a die-to-wafer bonding process in order to realize near-infrared laser emission on and coupled to SOI.
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DOI: 10.1016/S1369-7021(07)70178-5
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