MKS Instruments, Inc. (NASDAQ: MKSI), a global provider of technologies that enable advanced processes and improve productivity, has introduced Dynamic Frequency Tuning (DFT) technology in RF plasma generators. DFT is a patented new capability which provides significant enhancement over conventional frequency tuning schemes which require more than 500 μsec of course and fine steps to search for the minima in reflected power. With DFT, measurement of power distortion is used to quickly and accurately achieve matched power in less than 50μsec. DFT assures more power is delivered to the process and not mismatched or wasted. This is important because the plasma is stabilized faster making the process more controlled, consistent and repeatable.
DFT technology eliminates redundant sensing and control between the RF power supply and the impedance matching network, enabling the use of traditional control theory. This results in near instantaneous and more accurate power tuning, especially important during pulsed operation. DFT provides optimal tuning without the need to constantly adjust configuration parameters when a process change is made.
Used in semiconductor applications such as PECVD, PE-ALD and oxide and poly etch, DFT technology has proven invaluable for reduced plasma stabilization time resulting in more controlled, consistent and repeatable etch and deposition steps. DFT, in combination with MKS, ENI® Advanced RF pulsing, constitutes a key technology in the fabrication of 3D NAND, FinFET, DRAM and TSV devices. DFT and high frequency pulsing can prevent channel hole bowing and twisting during 3D NAND Flash fabrication. DFT and advanced pulsing are offered in RF plasma generator frequencies from 2MHz to 100MHz.
This story is reprinted from material from MKS Instruments, Inc., with editorial changes made by Materials Today. The views expressed in this article do not necessarily represent those of Elsevier.