It is widely agreed that new materials, structures and device concepts are needed to sustain the relentless trend of transistor scaling for continued progress in CMOS. Perhaps one of the most prominent group of materials/structures being considered are semiconductor nanowires, which are single-crystals with diameters of a few nanometres and lengths up to tens of micrometres. A typical “bottom-up” nanowire synthesis process involves vapour-liquid-solid or vapour-solid growth mechanisms in which nanoparticles are used as catalysts to continuously feed the one-dimensional material growth.

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