We give a brief overview of the development and recent progress of a new technology, silicon dislocation-engineered light-emitting diodes (LEDs). The dislocation-engineering method enables the development of light emitters in conventional silicon technology. Key and probably unique to this approach is its genuine and total compatibility with the standard ultra-large-scale integration (ULSI) process used to produce complex computer chips.

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DOI: 10.1016/S1369-7021(04)00677-7