Sign up or log in to your free Materials Today account to download the full article.

Tin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2 (FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.

This article originally appeared in Applied Surface Science 434, 2018, Pages 1336-1343.

When you register for this article your registration details will be passed to the sponsor who will provide you with information relevant to this topic.

Click here to find out more about Advanced Materials Analysis

Already a Materials Today member?

Log in to your Materials Today account to access this feature.