Materials Science and Engineering B (MSEB) aims at providing a leading international forum for material researchers across the disciplines of theory, experiment, and device applications. It publishes original studies and reviews related to the calculation, synthesis, processing, characterization, and understanding of advanced quantum materials such as low-dimensional materials, topological materials, meta-materials, correlated electronic materials and novel magnetic materials, as well as how these materials can be utilized in the construction of novel devices like quantum computers, quantum sensors, spintronics and optoelectronics devices. Studies including demonstrations of these devices are also welcome. To be published in MSEB, papers must meet the high scientific standards, contain original science and make significant advances within the field. Submissions will first be assessed by an editor before being sent to independent referees to ensure it meets the scope and standards of MSEB.

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Editorial board

Editor-in-Chief

  • J. Xia
    Irvine, California, USA

Editors

  • E. Levenson-Falk
  • F. Zhang
  • M. Miao
  • B. Casas

Editorial Board

  • D. Choi
    Pacific Northwest National Laboratory, Richland, Washington, USA
  • J.M.D. Coey
    Trinity College, Dublin, Ireland
  • L. Cohen
    University of California at Berkeley, Berkeley, California, USA
  • P. Deymier
    University of Arizona, Tucson, Arizona, USA
  • B. Dunn
    University of California at Los Angeles (UCLA), Los Angeles, California, USA
  • J. Etourneau
    Institut Universitaire de Technologie, Pessac, France
  • R. Fornari
    MASPEC, Fontanini, Parma, Italy
  • R. Freer
    University of Manchester, Manchester, England, UK
  • S. Gaan
    Intel Corporation, Chandler, Arizona, USA
  • F. Gervais
    Université Francois-Rabelais de Tours, Tours, France
  • M. Gervais
    Université Francois-Rabelais de Tours, Tours, France
  • N. Govindaraju
    Oklahoma State University, Tulsa, Oklahoma, USA
  • M. Grinberg
  • A.F. Hepp
    NASA Glenn Research Center, Cleveland, Ohio, USA
  • N. Hort
    Helmholtz-Zentrum Geesthacht, Geesthacht, Germany
  • K.T. Jacob
    Indian Institute of Science, Bangalore, India
  • V. Jayaram
    Indian Institute of Science, Bangalore, India
  • S. Jin
    University of California at San Diego (UCSD), San Diego, La Jolla, California, USA
  • C. Julien
    Sorbonne Universités
  • J. Y. Kim
    Pacific Northwest National Laboratory, Richland, Washington, USA
  • K. Kitamura
    National Institute of Materials Science, Ibaraki, Japan
  • K. Kohn
    Waseda University, Shinjuku-Ku, Japan
  • Y. Komem
    Technion - Israel Institute of Technology, Haifa, Israel
  • S. Makridis
    University of Patras, Agrinio, Greece
  • A. Manivannan
    US DOE/NETL, Morgantown, West Virginia, USA
  • J. Massies
    Centre National de la Recherche Scientifique (CNRS), Valbonne, France
  • S.R. Naryanan
    California Institute of Technology, Pasadena, USA
  • R.E. Riman
    Rutgers University, Piscataway, New Jersey, USA
  • S. H. Risbud
    University of California, Davis, Davis, California, USA
  • S. Sampath
    Indian Institute of Science, Bangalore, India
  • P. Siffert
    Centre National de la Recherche Scientifique (CNRS), Strasbourg, France
  • R. Singh
    University of Cincinnati, Cincinnati, Ohio, USA
  • M.M. Thackeray
    Argonne National Laboratory, Argonne, Illinois, USA
  • F Witte
    Charité - Universitätsmedizin Berlin, Berlin, Germany