The characterization of nanosize SOI materials and devices is challenging because multiple oxides, interfaces and channels coexist. Conventional measurement methods need to be replaced, or at least updated. We review the routine techniques that proved efficient for the evaluation of bare SOI wafers (essentially the pseudo-MOSFET) and of MOS structures (transistors and gated diodes). Informative examples are selected to illustrate the typical properties of advanced SOI wafers and MOSFETs. We will show how the ultrathin film and short-channel effects affect the interpretation of the experimental data.
boron arsenide (BAs) has unusually high thermal conductivity, which could help keep the next generation of electronic and optoelectronic devices cooler
Scientists have synthesized a novel organic/inorganic hybrid 2D material with promising electrical and magnetic properties.