Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.

Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.

Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.Submit your manuscript

Editorial board

Editor in Chief

  • Steven M. Durbin
    Western Michigan University, Kalamazoo, Michigan, USA


  • K.Y. Cheong
    Universiti Sains Malaysia, Penang, Malaysia
  • K. Durose
    University of Liverpool, Liverpool, UK
  • A. Hernández Ramírez
    Universidad Autónoma de Nuevo León, Monterrey, Mexico
  • M. Ichimura
    Nagoya Institute of Technology, Nagoya, Japan
  • G. Impellizzeri
    CNR-IMM, Catania, Italy
  • J. Major
    University of Liverpool, Liverpool, UK
  • H. Park
    Kyungpook National University, Daegu, The Republic of Korea

Chair of the International Editorial Board

  • A.F. Hepp, Editor-in-Chief Emeritus
    NASA Glenn Research Center, Cleveland, Ohio, USA

International Editorial Board

  • M.S. Aida
    University of Constantine, Constantine, Algeria
  • J. Aldous
    University of Cambridge, Cambridge, England, UK
  • G. Almuneau
    Laboratoire d'analyse et d'architecture des systèmes (LAAS) -CNRS, Toulouse, France
  • D.A. Amos
    University of Louisville, Louisville, Kentucky, USA
  • A. Anctil
    Michigan State University, East Lansing, Michigan, USA
  • C.G. Bailey
    Old Dominion University, Norfolk, Virginia, USA
  • A.R. Barron
    Rice University, Houston, Texas, USA
  • K. Biswas
    Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India
  • H. Bracht
    Westfälische Wilhelms-Universität Münster, Münster, Germany
  • X.-A. Cao
    West Virginia University, Morgantown, West Virginia, USA
  • L.S. Cavalcante
    Universidade Estadual do Piauí (UESPI), Teresina-PI, Brazil
  • M.V.S. Chandrashekhar
    University of South Carolina, Columbia, South Carolina, USA
  • A. Chawanda
    Midlands State University, Gweru, Zimbabwe
  • L.-C. Chen
    National Taipei University of Technology, Taipei, Taiwan
  • R.R. Chianelli
    University of Texas at El Paso, El Paso, Texas, USA
  • O. Cojocaru-Mirédin
    Max Planck Institut (MPI) für Eisenforschung, Düsseldorf, Germany
  • A. Cros Stötter
    Universitat de València, Paterna, Valencia, Spain
  • C. Cui
    The University of Sydney, Sydney, New South Wales, Australia
  • M.M. Diale
    University of Pretoria, Hatfield, South Africa
  • R. Duffy
    University College Cork, Cork, Ireland
  • M. Eizenberg
    Technion - Israel Institute of Technology, Haifa, Israel
  • A. Erol
    İstanbul Üniversitesi, Istanbul, Turkey
  • M. Fink
    Tulane University, New Orleans, Louisiana, USA
  • D.J. Flood
    Natcore Technology, Inc., Oberlin, Ohio, USA
  • M.A. Fraga
    Inst. Tecnologico de Aeronaut, Sao José dos Campos-SP, Brazil
  • A.F. Freundlich
    University of Houston
  • K. Fröhlich
    Slovak Academy of Sciences, Bratislava, Slovakia
  • L.J. Guido
    Virginia Tech, Blacksburg, Virginia, USA
  • P. Hari
    University of Tulsa, Tulsa, Oklahoma, USA
  • Zs. J. Horvath
    Hungarian Academy of Sciences, Budapest, Hungary
  • W.C. Hughes
    James Madison University, Harrisonburg, Virginia, USA
  • M. Ichimura
    Nagoya Institute of Technology, Nagoya, Japan
  • M.H.-C. Jin
    Johns Hopkins University, Laurel, Maryland, USA
  • R.P.O. Jones
    Anglia Ruskin University, Cambridge, England, UK
  • S. Kaneco
    Mie University, Mie, Japan
  • Z.H. Kang
    Soochow University, Suzhou, China
  • M.K. Keswani
    University of Arizona, Tucson, Arizona, USA
  • M. Krunks
    Tallinn University of Technology, Tallinn, Estonia
  • C.P. Kubiak
    University of California at San Diego (UCSD), La Jolla, California, USA
  • P.N. Kumta
    University of Pittsburgh, Pittsburgh, Pennsylvania, USA
  • M. Lehocky
    Tomas Bata University in Zlin, Zlin, Czech Republic
  • M. Leskalä
    University of Helsinki, Helsinki, Finland
  • X. Li
    University of Illinois at Urbana-Champaign, Urbana, Illinois, USA
  • O. Lupan
    Technical University of Moldova (T.U.M.), Chisinau, Moldova
  • T. Y. Ma
    Gyeongsang National University, Jinju, The Republic of Korea
  • J. Maranchi
    Johns Hopkins University, Laurel, Maryland, USA
  • R.E. Marotti Priero
    Universidad de la República, Montevideo, Uruguay
  • M.A. Meléndez-Lira
    Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), San Pedro Zacatenco, Mexico
  • E.N. Napolitani
    University of Padova, PADOVA, Italy
  • M. Nolan
    University College Cork, Cork, Ireland
  • J. Novák
    Slovak Academy of Sciences, Bratislava, Slovakia
  • N. Nuraje
    Texas Tech University, Lubbock, Texas, USA
  • M. Osofsky
    Naval Research Laboratory, Washington, District of Columbia, USA
  • J. Osvald
    Slovak Academy of Sciences, Bratislava, Slovakia
  • A. Paskaleva
    Bulgarian Academy of Sciences, Sofia, Bulgaria
  • S. Patzig-Klein
    RENA GmbH, Freiburg im Breisgau, Germany
  • I. Poulios
    Aristotle University of Thessaloniki, Thessaloniki, Greece
  • A. Pradhan
    Norfolk State University, Norfolk, Virginia, USA
  • P.C. Psarras
    Stanford University, Stanford, California, USA
  • R.P. Raffaelle
    Rochester Institute of Technology, Rochester, New York, USA
  • M.K. Ram
    University of South Florida, Tampa, Florida, USA
  • T. Riedl
    Bergische Universität Wuppertal, Wuppertal, Germany
  • J. Rorison
    University of Bristol, Bristol, UK
  • M.A. Sahiner
    Seton Hall University, South Orange, New Jersey, USA
  • D. Schiraldi
    Case Western Reserve University, Cleveland, Ohio, USA
  • A. Sellai
    Sultan Qaboos University, Muscat, Oman
  • T. Singh
    Intel Corporation, Hillsboro, Oregon, USA
  • E. Stathatos
    Technological Education Institute of Western Greece, Patras, Greece
  • R. Thiruvengadathan
    Amrita Vishwa Vidyapeetham University, Coimbatore, India
  • J. Trojan-Piegza
    University of Wrocław, Wrocław, Poland
  • A. Türüt
    Istanbul Medeniyet University, Istanbul, Turkey
  • S. Velumani
    Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), Irapuato, Mexico
  • P. Verma
    GlobalFoundries Inc., Sunnyville, California, USA
  • J. Williams
    Australian National University, Canberra, Australian Capital Territory, Australia
  • M. Xia
    University of British Columbia, Vancouver, BC, Canada
  • L. Zhao
    Beihang University, Beijing, China
  • T. Zheleva
    U.S. Army Research Laboratory, Adelphi, Maryland, USA
  • R. Zheng
    The University of Sydney, Sydney, New South Wales, Australia