Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.

Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.

Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.Submit your manuscript

Editorial board

Editor in Chief

  • Steven M. Durbin
    Western Michigan University, Kalamazoo, Michigan, United States


  • K.Y. Cheong
    Universiti Sains Malaysia, School of Materials & Mineral Resources Engineering, Penang, Malaysia
  • A. Hernández Ramírez
    Universidad Autónoma de Nuevo León, Fac. de Ciencias Químicas, Monterrey, Mexico
  • M. Ichimura
    Nagoya Institute of Technology, Nagoya, Japan
  • G. Impellizzeri
    CNR-IMM, Catania, Roma Italy
  • J. Major
    University of Liverpool, Liverpool, United Kingdom
  • A. Schleife
    University of Illinois at Urbana-Champaign Department of Materials Science and Engineering, Urbana, Illinois, United States

Chair of the International Editorial Board

  • A.F. Hepp Editor-in-Chief Emeritus
    NASA John H Glenn Research Center, Cleveland, Ohio, United States

International Editorial Board

  • M.S. Aida
    University of Constantine 1, Constantine, Algeria
  • J. Aldous
    University of Cambridge, Cambridge, United Kingdom
  • G. Almuneau
    Laboratory for Systems Analysis and Architecture, Toulouse, France
  • D.A. Amos
    University of Louisville, Louisville, Kentucky, United States
  • A. Anctil
    Michigan State University, East Lansing, Michigan, United States
  • C.G. Bailey
    Old Dominion University, Norfolk, Virginia, United States
  • A.R. Barron
    Rice University, Houston, Texas, United States
  • K. Biswas
    Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India
  • H. Bracht
    University of Münster, Munster, Germany
  • X.-A. Cao
    West Virginia University, Morgantown, West Virginia, United States
  • L.S. Cavalcante
    Universidade Estadual do Piauí (UESPI), Centro de Ciências da Natureza (CCN), Teresina-PI, Brazil
  • M.V.S. Chandrashekhar
    University of South Carolina, Columbia, South Carolina, United States
  • A. Chawanda
    Midlands State University, Gweru, Zimbabwe
  • L.-C. Chen
    National Taipei University of Technology, Taipei, Taiwan
  • R.R. Chianelli
    University of Texas at El Paso, El Paso, Texas, United States
  • O. Cojocaru-Mirédin
    Max Planck Institute for Iron Research GmbH, Dusseldorf, Germany
  • A. Cros Stötter
    University of Valencia, Valencia, Spain
  • C. Cui
    The University of Sydney, Sydney, Australia
  • M.M. Diale
    University of Pretoria, Dept. of Physics, Hatfield, South Africa
  • R. Duffy
    University College Cork National University of Ireland, Cork, Ireland
  • K. Durose
    University of Liverpool, Liverpool, United Kingdom
  • M. Eizenberg
    Technion Israel Institute of Technology, Haifa, Israel
  • A. Erol
    İstanbul Üniversitesi, Istanbul, Turkey
  • M. Fink
    Tulane University, New Orleans, Louisiana, United States
  • D.J. Flood
    Natcore Technology, Inc., Oberlin, Ohio, United States
  • M.A. Fraga
    Inst. Tecnologico de Aeronaut, Dept. de Ciencia e Tecnologia, Sao José dos Campos-SP, Brazil
  • A.F. Freundlich
    University of Houston, Houston Texas, United States
  • K. Fröhlich
    Slovak Academy of Sciences, Bratislava, Slovakia
  • L.J. Guido
    Virginia Tech University Bookstore, Blacksburg, Virginia, United States
  • P. Hari
    University of Tulsa, Tulsa, Oklahoma, United States
  • Zs. J. Horvath
    Hungarian Academy of Sciences, Budapest, Hungary
  • W.C. Hughes
    James Madison University, Harrisonburg, Virginia, United States
  • M. Ichimura
    Nagoya Institute of Technology, Nagoya, Japan
  • M.H.-C. Jin
    Johns Hopkins University Applied Physics Laboratory Information Group, Laurel, Maryland, United States
  • R.P.O. Jones
    Anglia Ruskin University, Global Sustainability Institute, Cambridge, United Kingdom
  • S. Kaneco
    Mie University, Dept. of Chemistry, Mie, Japan
  • Z.H. Kang
    Soochow University, Suzhou, China
  • M.K. Keswani
    University of Arizona, Tucson, Arizona, United States
  • M. Krunks
    Tallinn University of Technology, Tallinn, Estonia
  • C.P. Kubiak
    University of California at San Diego (UCSD), Dept. of Chemistry & Biochemistry, La Jolla, California, United States
  • P.N. Kumta
    University of Pittsburgh, Pittsburgh, Pennsylvania, United States
  • M. Lehocky
    Tomas Bata University in Zlin, Zlin, Czech Republic
  • M. Leskalä
    University of Helsinki, HELSINKI, Finland
  • X. Li
    University of Illinois at Urbana-Champaign, Urbana, Illinois, United States
  • O. Lupan
    Technical University of Moldova, Chisinau, Moldova, Republic of
  • T. Y. Ma
    Gyeongsang National University, Jinju, Republic of Korea
  • J. Maranchi
    Johns Hopkins University Applied Physics Laboratory Information Group, Laurel, Maryland, United States
  • R.E. Marotti Priero
    University of the Republic Uruguay, Montevideo, Uruguay
  • M.A. Meléndez-Lira
    Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), Dept. of Physics, San Pedro Zacatenco, Mexico
  • E.N. Napolitani
    University of Padua, Padova, Italy
  • M. Nolan
    University College Cork National University of Ireland, Cork, Ireland
  • J. Novák
    Slovak Academy of Sciences, Bratislava, Slovakia
  • N. Nuraje
    TEXAS TECH UNIVERSITY, Lubbock, Texas, United States
  • M. Osofsky
    US Naval Research Laboratory, Washington, District of Columbia, United States
  • J. Osvald
    Slovak Academy of Sciences, Bratislava, Slovakia
  • H. Park
    Kyungpook National University, Daegu, Republic of Korea
  • A. Paskaleva
    Bulgarian Academy of Sciences, Sofiya, Bulgaria
  • S. Patzig-Klein
    RENA GmbH, Solar Technology Center Freiburg, Freiburg im Breisgau, Germany
  • I. Poulios
    Aristotle University of Thessaloniki, Thessaloniki, Greece
  • A. Pradhan
    Norfolk State University, Norfolk, Virginia, United States
  • P.C. Psarras
    STANFORD UNIVERSITY, Stanford, California, United States
  • R.P. Raffaelle
    Rochester Institute of Technology, Rochester, New York, United States
  • M.K. Ram
    University of South Florida, Tampa, Florida, United States
  • T. Riedl
    University of Wuppertal, Wuppertal, Germany
  • J. Rorison
    University of Bristol, Bristol, United Kingdom
  • M.A. Sahiner
    Seton Hall University, South Orange, New Jersey, United States
  • D. Schiraldi
    CASE WESTERN RESERVE UNIVERSITY, Cleveland, Ohio, United States
  • A. Sellai
    Sultan Qaboos University, Muscat, Oman
  • T. Singh
    Intel Corporation, Intel Labs, CRL, Hillsboro, Oregon, United States
  • E. Stathatos
    Technological Education Institute of Western Greece, Dept. of Electrical Engineering, Patras, Greece
  • R. Thiruvengadathan
    Amrita Vishwa Vidyapeetham, Coimbatore, India
  • J. Trojan-Piegza
    Wroclaw University of Science and Technology, Wroclaw, Poland
  • A. Türüt
    Istanbul Medeniyet University, İstanbul, Turkey
  • S. Velumani
    Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), Irapuato, Mexico
  • P. Verma
    GlobalFoundries Inc., Sunnyville, California, United States
  • J. Williams
    Australian National University, Canberra, Australia
  • M. Xia
    The University of British Columbia, Vancouver, British Columbia, Canada
  • L. Zhao
    Beihang University, Beijing, China
  • T. Zheleva
    US Army Research Laboratory, Adelphi, Maryland, United States
  • R. Zheng
    The University of Sydney, Sydney, Australia