We demonstrate cesium-doping in methylammonium lead iodide perovskites (CsxMA1−xPbI3) light absorbers to improve the performance of inverted-type perovskite/fullerene planar heterojunction hybrid solar cells. CsxMA1−xPbI3 perovskite devices with an optimized 10% Cs doping concentration exhibit remarkable improvement in device efficiency from 5.51% to 7.68% due to increases in short-circuit current density and open-circuit voltage via increased light absorption at optimum device thickness, improved film morphology and a widening of the energy difference between the valence band of the perovskite and lowest unoccupied molecular orbital level of PCBM.

This article originally appeared in Nano Energy 7, 2014, Pages 80-85.

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