Abstract: Magnetic materials enjoy an envious position in the area of data storage, electronics, and even in biomedical field. This review provides an overview of low-dimensional magnetism in graphene, h-BN, and carbon nitrides, which originates from defects like vacancy, adatom, doping, and dangling bonds. In transition metal dichalcogenides, a tunable magnetism comes from doping, strain, and vacancy/defects, and these materials offer spintronics, as well as photoelectronic potentials, since they have an additional degree of freedom called valley state (e.g. MoS2). Strain- and layer-dependent magnetic ordering has been observed in layered compounds like CrXTe3, CrI3, and trisulfides. The magnetism in 2D oxides like MoO3, Ni(OH)2, and perovskites are also interesting as they are potential candidates for next-generation devices having faster processing and large data storage capacity. Quasi 2D magnetism in MXene and in atomically thin materials supported on 3D materials will also be discussed. Finally, some of the challenges related to the control of defects and imperfections in 2D lattice, promising approaches to overcome them will be covered.

Magnetism in two-dimensional materials beyond graphene
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DOI: 10.1016/j.mattod.2019.03.015