This diagram illustrates the effect of helium ions on the mechanical and electrical properties of a layered ferroelectric: a) Disappearance domains in the exposed area – as the mound forms, yellow regions representing ferroelectricity gradually disappear; b) Mechanical properties of the material – warmer colors indicate hard areas, cooler colors indicate softer areas; c) Conductivity enhancement – warmer colors show insulating areas, cooler colors show more conductive areas. Image: ORNL.
This diagram illustrates the effect of helium ions on the mechanical and electrical properties of a layered ferroelectric: a) Disappearance domains in the exposed area – as the mound forms, yellow regions representing ferroelectricity gradually disappear; b) Mechanical properties of the material – warmer colors indicate hard areas, cooler colors indicate softer areas; c) Conductivity enhancement – warmer colors show insulating areas, cooler colors show more conductive areas. Image: ORNL.

Two-dimensional (2D) electronic devices could inch closer to their ultimate promise of low power, high efficiency and mechanical flexibility with a processing technique developed at the US Department of Energy's Oak Ridge National Laboratory (ORNL).

A team led by Olga Ovchinnikova at ORNL's Center for Nanophase Materials Sciences Division used a helium ion microscope, which is a kind of atomic-scale ‘sandblaster’, on the layered ferroelectric surface of a bulk copper indium thiophosphate. The result, as detailed in a paper in the journal ACS Applied Materials and Interfaces, was the surprising discovery of a material with tailored properties that could potentially find use in phones, photovoltaics, flexible electronics and screens.

"Our method opens pathways to direct-write and edit circuitry on 2D material without the complicated current state-of-the-art multi-step lithographic processes," Ovchinnikova said.

While a helium ion microscope is typically used to cut and shape matter, Ovchinnikova and her colleague Alex Belianinov showed how it could be used to control the distribution of ferroelectric domains, enhance conductivity and grow nanostructures. Their work could eventually lead to silicon being usurped as the material of choice for semiconductors in some applications.

"Everyone is looking for the next material – the thing that will replace silicon for transistors," said Belianinov. "2D devices stand out as having low power consumption and being easier and less expensive to fabricate without requiring harsh chemicals that are potentially harmful to the environment."

Reducing power consumption by using 2D-based devices could be as significant as improving battery performance. "Imagine having a phone that you don't have to recharge but once a month," Ovchinnikova said.

This story is adapted from material from Oak Ridge National Laboratory, with editorial changes made by Materials Today. The views expressed in this article do not necessarily represent those of Elsevier. Link to original source.