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Electronic CHANGE TOPIC

Electronic properties news, June 2019

Strontium titanate has a ‘hidden’ phase that gives the material new ferroelectric properties when it is activated by extremely fast pulses of light.

Lanthanum strontium manganite can retain its magnetic properties in atomic layers if it is ‘sandwiched’ between layers of a different ceramic oxide.

Spherical encapsulation for bigger semiconductor sample testing

Antennas made from carbon nanotube films are just as efficient as copper for wireless applications, while also being tougher and more flexible.

A novel platform for altering the properties of a 2D material by putting it under strain could provide the basis for a new kind of nanoscale transistor.

nanobelts of the transition metal NbAs show high mobility even when the carrier density is also high

By developing a process for fabricating oxide perovskite crystals in free-standing layers, researchers have produced a new class of 2D material.

Ultraviolet LEDs for lepidoptery

The strain created by growing 2D crystals over 3D objects can be used to tailor the crystals' optoelectronic properties.

Chemists have found a way to improve the speed and durability of smart glass by providing a better understanding of how the glass works at the nanoscale.

Lowering the power of OLEDs

By incorporating liquid metal droplets into an elastomer, researchers have created a highly stretchable, soft, multi-functional composite.

The electronic properties of the 2D semiconductor tungsten disulfide can be dramatically changed by doping it with carbon-hydrogen molecules.

Engineers have developed a high-throughput computational method to design new hybrid organic-inorganic materials for solar cells and LEDs.

Neutron scattering experiments on iron selenide have revealed that its electronic behavior is very similar to other iron-based superconductors.

By permanently stressing graphene with a novel laser technique, researchers have been able to provide it with the largest ever band gap.

A novel two-step, ultra-clean process for fabricating a 2D transistor separates the ‘messy’ fabrication steps from the 2D semiconductor layer.

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